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Semiconductors


echoi11

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Hello all I am researching a couple of semiconductor devices. I was wondering I could get some information on these questions. Thank you.

 

How does temperature affect the band structure and the I-V characteristics of semiconductor devices?

How does changing the carrier lifetime affect semiconductor devices?

For a GaAs PN junction, imagine that the device is to be used as a photo-diode. What width of intrinsic layer would you want to design the device with if the photons only absorb in the depletion/intrinsic regions? Assume: wavelength = 0.75um.

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